By the end of the year, Samsung has declared that it will begin mass-producing the new UFS 4.0 memory.
Using Samsung’s 7th-generation V-NAND, the tech giant claims that UFS 4.0 storage is the industry’s “best performing” UFS 4.0 memory unit.
There will be different capacities up to 1TB for Samsung’s UFS 4.0 modules, which will have a maximum package dimension of 11mm x 13mm x 1mm. It is anticipated that mass production would begin in the third quarter of 2022.
As of January 2020, the UFS 3.1 specification promised sequential read rates of up to 4,200MB/s and sequential write speeds of up to 2,800MB/s.
UFS 4.0 memory will be sold to the mobile sector as it moves to 5G after JEDEC’s board of directors authorised Samsung’s implementation, according to Samsung. The UFS 4.0 specification hasn’t been released by JEDEC yet.
“Up to 23.2Gbps is possible per lane in UFS 4. This is double the performance of UFS 3.1. That much bandwidth is perfect for 5G smartphones requiring huge amounts of data processing, and is also expected to be adopted in future automotive applications, AR, and VR as well,” Samsung said in a Twitter thread.
With the new specification, it is possible that the battery life of mobile phones would be improved. As a result, Samsung’s new UFS 4.0 memory is 46 percent more efficient than the previous version, with a sequential read speed of up to 6.01 MB/s per milliampere in testing conditions (mA).
UFS 4.0 from Samsung has a “improved” version of the Replay Protected Memory Block (RPMB), which is supposed to safeguard apps like digital wallets from replay assaults.
For read and write actions, RPMB requires authentication to access the partitions of memory protected by RPMB. According to Samsung, RPMB’s UFS 4.0 design is 1.8 times more efficient at storing secrets.
